Wolfspeed GaN on SiC产品线
Wolfspeed推动了射频技术的发展,这些技术已成为横跨商业和军用航空,空中交通管制,气象服务,飞机对卫星通信,太空探索等领域的无线通信和雷达系统的骨干。 Wolfspeed的创新,包括基于SiC的GaN研究与开发方面的突破,完全集成的设计支持以及定制组装,所有这些都有助于Wolfspeed不断为客户提供尺寸,重量和功率方面均具有显着优势的解决方案。 作为您完整的RF系统设计合作伙伴,我们在SiC(封装和裸模)和LDMOS器件上提供广泛的GaN产品组合。
订货代码 | Technology | Frequency (Min) | Frequency (Max) | 峰值输出功率 | Gain | 效率 | 工作电压 | Form | 封装类型 |
CGH60008D-GP4 | GaN on SiC | DC | 6 GHz | 8 W | >12 dB | 65% | 28V | Discrete Bare Die | 裸片 |
CGH60015D-GP4 | GaN on SiC | DC | 6 GHz | 15 W | >12 dB | 65% | 28V | Discrete Bare Die | 裸片 |
CGH60030D-GP4 | GaN on SiC | DC | 6 GHz | 30 W | >12 dB | 65% | 28V | Discrete Bare Die | 裸片 |
CGH60060D-GP4 | GaN on SiC | DC | 6 GHz | 60 W | >12 dB | 65% | 28V | Discrete Bare Die | 裸片 |
CGH60120D-GP4 | GaN on SiC | DC | 6 GHz | 120 W | >12 dB | 65% | 28V | Discrete Bare Die | 裸片 |
CMPA0060002D | GaN on SiC | DC | 6 GHz | 2 W | 17 dB | 30% | 28V | MMIC Bare Die | 裸片 |
CMPA0060025D | GaN on SiC | DC | 6 GHz | 25 W | 18 dB | 33% | 50V | MMIC Bare Die | 裸片 |
CMPA2560025D | GaN on SiC | 2.5 GHz | 6 GHz | 25 W | 24 dB | 31% | 28V | MMIC Bare Die | 裸片 |
CMPA601C025D | GaN on SiC | 6 GHz | 12 GHz | 25 W | 32 dB | 32% | 28V | MMIC Bare Die | 裸片 |
CGH40006P | GaN on SiC | DC | 6 GHz | 6 W | >11 dB | 65% | 28V | 封装分立晶体管 | Pill |
CGH40006S | GaN on SiC | DC | 6 GHz | 6 W | >11 dB | 65% | 28V | 封装分立晶体管 | Plastic |
CGH40010F | GaN on SiC | DC | 6 GHz | 10 W | >14 dB | 65% | 28V | 封装分立晶体管 | Flange |
CG2H40025F | GaN on SiC | DC | 6 GHz | 25 W | >15 dB | 62% | 28V | 封装分立晶体管 | Flange |
CGH40035F | GaN on SiC | DC | 6 GHz | 35 W | >13 dB | 60% | 28V | 封装分立晶体管 | Flange |
CGH40045F | GaN on SiC | DC | 4 GHz | 45 W | >12 dB | 55% | 28V | 封装分立晶体管 | Flange |
CGH40090PP | GaN on SiC | DC | 4 GHz | 90 W | >14 dB | 55% | 28V | 封装分立晶体管 | Push-Pull |
CGH40120F | GaN on SiC | DC | 3 GHz | 120 W | >15 dB | 70% | 28V | 封装分立晶体管 | Flange |
CGH40120P | GaN on SiC | DC | 3 GHz | 120 W | >15 dB | 70% | 28V | 封装分立晶体管 | Pill |
CGH40180PP | GaN on SiC | DC | 3 GHz | 180 W | >15 dB | 70% | 28V | 封装分立晶体管 | Push-Pull |
CMPA0060002F | GaN on SiC | DC | 6 GHz | 2 W | 17 dB | 23% | 28V | Packaged MMIC | Flange |
CMPA0060025F | GaN on SiC | DC | 6 GHz | 25 W | 17 dB | 28% | 50V | Packaged MMIC | Flange |
CMPA2560025F | GaN on SiC | 2.5 GHz | 6 GHz | 25 W | 24 dB | 31% | 28V | Packaged MMIC | Flange |
CMPA601C025F | GaN on SiC | 6 GHz | 12 GHz | 25 W | 33 dB | 32% | 28V | Packaged MMIC | Flange |
CGHV1J006D-GP4 | GaN on SiC | DC | 18 GHz | 6 W | 17 dB | 60% | 40V | Discrete Bare Die | 裸片 |
CGHV1J025D-GP4 | GaN on SiC | DC | 18 GHz | 25 W | 17 dB | 60% | 40V | Discrete Bare Die | 裸片 |
CGHV1J070D-GP4 | GaN on SiC | DC | 18 GHz | 70 W | 17 dB | 60% | 40V | Discrete Bare Die | 裸片 |
CGHV1F006S | GaN on SiC | DC | 15 GHz | 6 W | >7 dB | 52% | 40V | 封装分立晶体管 | 表面贴装 |
CGHV1F025S | GaN on SiC | DC | 15 GHz | 25 W | 11 dB | 51% | 40V | 封装分立晶体管 | 表面贴装 |
CGHV40320D-GP4 | GaN on SiC | DC | 4 GHz | 320 W | 19 dB | 65% | 50V | Discrete Bare Die | 裸片 |
CGHV60040D-GP4 | GaN on SiC | DC | 6 GHz | 40 W | >7 dB | 65% | 50V | Discrete Bare Die | 裸片 |
CGHV60075D5-GP4 | GaN on SiC | DC | 6 GHz | 75 W | >7 dB | 65% | 50V | Discrete Bare Die | 裸片 |
CGHV60170D-GP4 | GaN on SiC | DC | 6 GHz | 170 W | >7 dB | 65% | 50V | Discrete Bare Die | 裸片 |
CGHV27060MP | GaN on SiC | DC | 2.7 GHz | 60 W | 16.5 dB | 64% | 50V | 封装分立晶体管 | Plastic |
CGHV35060MP | GaN on SiC | 2.7 GHz | 3.8 GHz | 60 W | 14.5 dB | 67% | 50V | 封装分立晶体管 | Plastic |
CGHV40030F | GaN on SiC | DC | 6 GHz | 30 W | 16 dB | 70% | 50V | 封装分立晶体管 | Flange |
CGHV40050F | GaN on SiC | DC | 4 GHz | 50 W | 16 dB | 53% | 50V | 封装分立晶体管 | Flange |
CGHV40100F | GaN on SiC | DC | 3 GHz | 100 W | 17.5 dB | 55% | 50V | 封装分立晶体管 | Flange |
CGH09120F | GaN on SiC | DC | 2.5 GHz | 120 W | 21 dB | 35% | 28V | 封装分立晶体管 | Flange |
CGH21120F | GaN on SiC | 1.8 GHz | 2.3 GHz | 120 W | 15 dB | 35% | 28V | 封装分立晶体管 | Flange |
CGH21240F | GaN on SiC | 1.8 GHz | 2.3 GHz | 240 W | 15 dB | 33% | 28V | 封装分立晶体管 | Flange |
CGH25120F | GaN on SiC | 2.5 GHz | 2.7 GHz | 120 W | >7 dB | 30% | 28V | 封装分立晶体管 | Flange |
CGH27015F | GaN on SiC | DC | 6 GHz | 15 W | 14.5 dB | 28% | 28V | 封装分立晶体管 | Flange |
CGH27030F | GaN on SiC | DC | 6 GHz | 30 W | 15 dB | 28% | 28V | 封装分立晶体管 | Flange |
CGH27030S | GaN on SiC | DC | 6 GHz | 30 W | 18 dB | 33% | 28V | 封装分立晶体管 | 表面贴装 |
CGH27060F | GaN on SiC | DC | 4 GHz | 60 W | 14 dB | 27% | 28V | 封装分立晶体管 | Flange |
CGH35015F | GaN on SiC | DC | 6 GHz | 15 W | 12 dB | 28V | 封装分立晶体管 | Flange | |
CGH35030F | GaN on SiC | DC | 6 GHz | 30 W | 12 dB | 25% | 28V | 封装分立晶体管 | Flange |
CGH35060F1 | GaN on SiC | 3.3 GHz | 3.6 GHz | 60 W | 12 dB | 25% | 28V | 封装分立晶体管 | Flange |
CGH55015F1 | GaN on SiC | DC | 6 GHz | 15 W | >10.5 dB | 25% | 28V | 封装分立晶体管 | Flange |
CGH55030F1 | GaN on SiC | DC | 6 GHz | 30 W | 10 dB | 25% | 28V | 封装分立晶体管 | Flange |
CGHV27015S | GaN on SiC | DC | 6 GHz | 15 W | 21 dB | 32% | 50V | 封装分立晶体管 | 表面贴装 |
CGHV27030S | GaN on SiC | DC | 6 GHz | 30 W | 21 dB | 32% | 50V | 封装分立晶体管 | 表面贴装 |
CMPA2735075D | GaN on SiC | 2.7 GHz | 3.5 GHz | 75 W | 28 dB | 61% | 28V | MMIC Bare Die | 裸片 |
CMPA801B025D | GaN on SiC | 8 GHz | 11 GHz | 25 W | 28 dB | 45% | 28V | MMIC Bare Die | 裸片 |
CGH31240F | GaN on SiC | 2.7 GHz | 3.1 GHz | 240 W | 12 dB | 60% | 28V | 封装分立晶体管 | Flange |
CGH35060F2 | GaN on SiC | 3.1 GHz | 3.5 GHz | 60 W | 12 dB | 60% | 28V | 封装分立晶体管 | Flange |
CGH35240F | GaN on SiC | 3.1 GHz | 3.5 GHz | 240 W | 11.6 dB | 57% | 28V | 封装分立晶体管 | Flange |
CGH55015F2 | GaN on SiC | DC | 6 GHz | 10 W | 12 dB | 60% | 28V | 封装分立晶体管 | Flange |
CGH55030F2 | GaN on SiC | DC | 6 GHz | 25 W | 12 dB | 60% | 28V | 封装分立晶体管 | Flange |
CGHV14250F | GaN on SiC | DC | 1.6 GHz | 250 W | 18 dB | 77% | 50V | 封装分立晶体管 | Flange |
CGHV14500F | GaN on SiC | 1.2 GHz | 1.4 GHz | 500 W | 16 dB | 68% | 50V | 封装分立晶体管 | Flange |
CGHV31500F | GaN on SiC | 2.7 GHz | 3.1 GHz | 500 W | 12.75 dB | 60% | 50V | 封装分立晶体管 | Flange |
CGHV35150F | GaN on SiC | 2.9 GHz | 3.5 GHz | 150 W | 13.5 dB | 50% | 50V | 封装分立晶体管 | Flange |
CGHV35400F | GaN on SiC | 2.9 GHz | 3.5 GHz | 400 W | 11 dB | 60% | 50V | 封装分立晶体管 | Flange |
CGHV59350F | GaN on SiC | 5.2 GHz | 5.9 GHz | 350 W | 11 dB | 55% | 50V | 封装分立晶体管 | Flange |
CGHV96100F2 | GaN on SiC | 7.9 GHz | 9.6 GHz | 100 W | 10 dB | 45% | 40V | 封装分立晶体管 | Flange |
CMPA801B025F | GaN on SiC | 8 GHz | 11 GHz | 25 W | 16 dB | 36% | 28V | Packaged MMIC | Flange |
CMPA1D1E030D | GaN on SiC | 13.75 GHz | 14.5 GHz | 30 W | 26 dB | 25% | 40V | MMIC Bare Die | 裸片 |
CGHV50200F | GaN on SiC | 4.4 GHz | 5 GHz | 200 W | 11.5 dB | 33% | 40V | 封装分立晶体管 | Flange |
CGHV96050F1 | GaN on SiC | 7.9 GHz | 8.4 GHz | 50 W | >13 dB | 33% | 40V | 封装分立晶体管 | Flange |
CMPA1D1E025F | GaN on SiC | 13.5 GHz | 14.5 GHz | 25 W | 26 dB | 16% | 40V | Packaged MMIC | Flange |
CGHV96050F2 | GaN on SiC | 7.9 GHz | 9.6 GHz | 50 W | 10 dB | 55% | 40V | 封装分立晶体管 | Flange |
CG2H80030D-GP4 | GaN on SiC | DC | 8 GHz | 30 W | 16.5 dB | 65% | 28V | Discrete Bare Die | 裸片 |
CGHV14800F | GaN on SiC | 1.2 GHz | 1.4 GHz | 800 W | 16 dB | 65% | 50V | 封装分立晶体管 | Flange |
CGHV59070F | GaN on SiC | 4.5 GHz | 5.9 GHz | 70 W | 12 dB | 50% | 50V | 封装分立晶体管 | Flange |
CMPA1C1D060D | GaN on SiC | 12.7 GHz | 13.25 GHz | 65 W | 26 dB | 30% | 40V | MMIC Bare Die | 裸片 |
CMPA5585030F | GaN on SiC | 5.5 GHz | 8.5 GHz | 30 W | 25 dB | 30% | 28V | Packaged MMIC | Flange |
CMPA2735015S | GaN on SiC | 2.7 GHz | 3.5 GHz | 15 W | 33 dB | 50% | 50V | Packaged MMIC | Plastic |
CMPA2735015D | GaN on SiC | 2.7 GHz | 3.5 GHz | 15 W | 32 dB | 45% | 50V | MMIC Bare Die | 裸片 |
CMPA2735030S | GaN on SiC | 2.7 GHz | 3.5 GHz | 30 W | 32 dB | 45% | 50V | Discrete Bare Die | 裸片 |
CMPA2735030D | GaN on SiC | 2.7 GHz | 3.5 GHz | 30 W | 30 dB | 45% | 50V | Discrete Bare Die | 裸片 |
CG2H40010F | GaN on SiC | DC | 6 GHz | 10 W | >16 dB | 65% | 28V | 封装分立晶体管 | Flange |
CG2H40045F | GaN on SiC | DC | 4 GHz | 45 W | >14 dB | 55% | 28V | 封装分立晶体管 | Flange |
CGH40025F | GaN on SiC | DC | 6 GHz | 25 W | >13 dB | 62% | 28V | 封装分立晶体管 | Flange |
CGHV40200PP | GaN on SiC | DC | 3 GHz | 250 W | 21 dB | 75% | 50V | 封装分立晶体管 | Push-Pull |
CG2H80015D-GP4 | GaN on SiC | DC | 8 GHz | 15 W | >12 dB | 70% | 28V | Discrete Bare Die | 裸片 |
CG2H80060D-GP4 | GaN on SiC | DC | 8 GHz | 60 W | >12 dB | 70% | 28V | Discrete Bare Die | 裸片 |
CMPA5585030D | GaN on SiC | 5.5 GHz | 8.5 GHz | 30 W | 30 dB | 44% | 28V | MMIC Bare Die | 裸片 |
CG2H30070F | GaN on SiC | 0.5 GHz | 3 GHz | 80 W | 15 dB | 55% | 28V | 封装分立晶体管 | Flange |
CGHV40180P | GaN on SiC | DC | 2 GHz | 200 W | 24 dB | 70% | 28V/50V | 封装分立晶体管 | Pill |
GTVA104001FA-V1 | GaN on SiC | 0.96 GHz | 1.215 GHz | 400 W | 19 dB | 70% | 50V | 封装分立晶体管 | Earless |
GTVA123501FA-V1 | GaN on SiC | 1.2 GHz | 1.4 GHz | 350 W | 18 dB | 71% | 50V | 封装分立晶体管 | Earless |
GTVA101K42EV-V1 | GaN on SiC | 0.96 GHz | 1.4 GHz | 1400 W | 17 dB | 68% | 50V | 封装分立晶体管 | Bolt Down |
GTVA311801FA-V1 | GaN on SiC | 2.7 GHz | 3.1 GHz | 180 W | 15 dB | 70% | 50V | 封装分立晶体管 | Earless |
GTVA107001EFC-V1 | GaN on SiC | 0.96 GHz | 1.215 GHz | 700 W | 20 dB | 70% | 50V | 封装分立晶体管 | Bolt Down |
CGHV37400F | GaN on SiC | 3.3 GHz | 3.7 GHz | 550 W | 14 dB | 55% | 48V | 封装分立晶体管 | Flange |
PTVA030121EA-V1 | LDMOS | 0.39 GHz | 0.45 GHz | 12 W | 25 dB | 69% | 50V | 封装分立晶体管 | Bolt Down |
PTVA035002EV-V1 | LDMOS | 0.39 GHz | 0.45 GHz | 450 W | 18 dB | 64% | 50V | 封装分立晶体管 | Bolt Down |
PTVA101K02EV-V1 | LDMOS | 1.03 GHz | 1.09 GHz | 900 W | 18 dB | 65% | 50V | 封装分立晶体管 | Bolt Down |
PTVA102001EA-V1 | LDMOS | 0.96 GHz | 1.6 GHz | 200 W | 18.5 dB | 60% | 50V | 封装分立晶体管 | Bolt Down |
PTVA104501EH-V1 | LDMOS | 0.96 GHz | 1.215 GHz | 450 W | 17.5 dB | 58% | 50V | 封装分立晶体管 | Bolt Down |
PTVA120251EA-V2 | LDMOS | 0.5 GHz | 1.4 GHz | 25 W | 18 dB | 54% | 50V | 封装分立晶体管 | Bolt Down |
PTVA120501EA-V1 | LDMOS | 1.2 GHz | 1.4 GHz | 50 W | 17 dB | 50% | 50V | 封装分立晶体管 | Bolt Down |
PTVA123501EC-V2 | LDMOS | 1.2 GHz | 1.4 GHz | 350 W | 17 dB | 55% | 50V | 封装分立晶体管 | Bolt Down |
PTVA123501FC-V1 | LDMOS | 1.2 GHz | 1.4 GHz | 350 W | 17 dB | 55% | 50V | 封装分立晶体管 | Earless |
PTVA127002EV-V1 | LDMOS | 1.2 GHz | 1.4 GHz | 700 W | 16 dB | 56% | 50V | 封装分立晶体管 | 表面贴装 |
PTVA047002EV-V1 | LDMOS | 0.47 GHz | 0.806 GHz | 700 W | 17.5 dB | 29% | 50V | 封装分立晶体管 | Bolt Down |
CMPA5259025F | GaN on SiC | 5.2 GHz | 5.9 GHz | 37 W | 32 dB | 50% | 28V | 封装分立晶体管 | Flange |
CMPA5259050F | GaN on SiC | 5.2 GHz | 5.9 GHz | 50 W | 30 dB | 54% | 28V | Packaged MMIC | Flange |
CMPA0527005F | GaN on SiC | 1.2 GHz | 1.4 GHz | 5 W | 20 dB | 47% | 50V | Packaged MMIC | Flange |
CGHV35120F | GaN on SiC | 3.1 GHz | 3.5 GHz | 120 W | >7 dB | 62% | 50V | 封装分立晶体管 | Flange |
CMPA901A035F | GaN on SiC | 9 GHz | 10 GHz | 40 W | 34 dB | 35% | 28V | Packaged MMIC | Flange |
CG2H40120F | GaN on SiC | DC | 2.5 GHz | 130 W | 20 dB | 70% | 28V | 封装分立晶体管 | Flange |
CMPA2060035F | GaN on SiC | 2 GHz | 6 GHz | 35 W | 27 dB | 35% | 28V | Packaged MMIC | Flange |
CG2H80120D-GP4 | GaN on SiC | DC | 8 GHz | 120 W | >12 dB | 65% | 28V | Discrete Bare Die | 裸片 |
CG2H80045D-GP4 | GaN on SiC | DC | 8 GHz | 45 W | 15 dB | 65% | 28V | Discrete Bare Die | 裸片 |
CG2H40035F | GaN on SiC | DC | 6 GHz | 35 W | 14 dB | 64% | 28V | 封装分立晶体管 | Flange |
CMPA2060035D | GaN on SiC | 2 GHz | 6 GHz | 35 W | 29 dB | 42% | 28V | MMIC Bare Die | 裸片 |
CMPA2735075F1 | GaN on SiC | 2.7 GHz | 3.5 GHz | 75 W | 29 dB | 57% | 28V | Packaged MMIC | Flange |
CMPA801B030D | GaN on SiC | 8 GHz | 11 GHz | 30 W | 28 dB | 42% | 28V | MMIC Bare Die | 裸片 |
CMPA801B030F | GaN on SiC | 8 GHz | 11 GHz | 30 W | 16 dB | 36% | 28V | Packaged MMIC | Flange |
CMPA2738060F | GaN on SiC | 2.7 GHz | 3.8 GHz | 80 W | 34 dB | 54% | 50V | Packaged MMIC | Flange |
CMPA0060025F1 | GaN on SiC | DC | 6 GHz | 25 W | 17 dB | 28% | 50V | Packaged MMIC | Flange |
CMPA0060002F1 | GaN on SiC | DC | 6 GHz | 2 W | 18 dB | 25% | 28V | Packaged MMIC | Flange |
CGHV1F006S-AMP1 | GaN on SiC | 5.85 GHz | 7.2 GHz | 6 W | >7 dB | NA | 40V | 开发板 | 表面贴装 |
CGHV1F006S-AMP3 | GaN on SiC | 8.5 GHz | 9.6 GHz | 6 W | >7 dB | NA | 40V | 开发板 | 表面贴装 |
CGH55015P2 | GaN on SiC | DC | 6 GHz | 10 W | 12 dB | 60% | 28V | 封装分立晶体管 | Pill |
CGH55015F2-AMP | GaN on SiC | 5.4 GHz | 5.9 GHz | 10 W | 12 dB | NA | 28V | 开发板 | Flange |
CGH40010P | GaN on SiC | DC | 6 GHz | 10 W | >14 dB | 65% | 28V | 封装分立晶体管 | Pill |
CGH40010F-AMP | GaN on SiC | 3.5 GHz | 3.9 GHz | 10 W | >14 dB | NA | 28V | 开发板 | Flange |
CG2H40025P | GaN on SiC | DC | 6 GHz | 25 W | >15 dB | 64% | 28V | 封装分立晶体管 | Pill |
CG2H40025F-AMP | GaN on SiC | 3.4 GHz | 3.8 GHz | 25 W | >15 dB | NA | 28V | 开发板 | Flange |
CG2H30070F-AMP2 | GaN on SiC | 0.5 GHz | 3 GHz | 80 W | 15 dB | NA | 28V | 开发板 | Flange |
CG2H40010F-AMP | GaN on SiC | 3.5 GHz | 3.9 GHz | 10 W | >16 dB | NA | 28V | 开发板 | Flange |
CG2H40010P | GaN on SiC | DC | 6 GHz | 10 W | >16 dB | 65% | 28V | 封装分立晶体管 | Pill |
CG2H40035F-AMP | GaN on SiC | DC | 6 GHz | 35 W | 14 dB | NA | 28V | 开发板 | Flange |
CG2H40035P | GaN on SiC | DC | 6 GHz | 35 W | 14 dB | 64% | 28V | 封装分立晶体管 | Pill |
CGHV96100F2-AMP | GaN on SiC | 7.9 GHz | 9.6 GHz | 100 W | 10 dB | NA | 40V | 开发板 | Flange |
CGHV96050F2-AMP | GaN on SiC | 8.4 GHz | 9.6 GHz | 50 W | 10 dB | NA | 40V | 开发板 | Flange |
CGHV27030S-AMP1 | GaN on SiC | 2.5 GHz | 2.7 GHz | 30 W | 21 dB | NA | 50V | 开发板 | 表面贴装 |
CGHV27030S-AMP2 | GaN on SiC | 2.5 GHz | 2.7 GHz | 30 W | 21 dB | NA | 28V | 开发板 | 表面贴装 |
CGHV27030S-AMP3 | GaN on SiC | 1.8 GHz | 2.2 GHz | 30 W | 21 dB | NA | 28V | 开发板 | 表面贴装 |
CGHV27030S-AMP4 | GaN on SiC | 1.8 GHz | 2.2 GHz | 30 W | 21 dB | NA | 50V | 开发板 | 表面贴装 |
CGHV27030S-AMP5 | GaN on SiC | 1.2 GHz | 1.4 GHz | 30 W | 21 dB | NA | 50V | 开发板 | 表面贴装 |
CG2H40045P | GaN on SiC | DC | 4 GHz | 45 W | >14 dB | 55% | 28V | 封装分立晶体管 | Pill |
CG2H40045F-AMP | GaN on SiC | 2.3 GHz | 2.7 GHz | 45 W | >14 dB | NA | 28V | 开发板 | Flange |
CG2H40120P | GaN on SiC | DC | 2.5 GHz | 130 W | 20 dB | 70% | 28V | 封装分立晶体管 | Pill |
CG2H40120F-AMP | GaN on SiC | 1.2 GHz | 1.4 GHz | 130 W | 20 dB | NA | 28V | 开发板 | Flange |
CGH21120F-AMP | GaN on SiC | 1.8 GHz | 2.1 GHz | 120 W | 15 dB | NA | 28V | 开发板 | Flange |
CGH21240F-AMP | GaN on SiC | 1.8 GHz | 2.1 GHz | 240 W | 15 dB | NA | 28V | 开发板 | Flange |
CGH27015P | GaN on SiC | DC | 6 GHz | 15 W | 14.5 dB | 28% | 28V | 封装分立晶体管 | Pill |
CGH27015F-AMP | GaN on SiC | 2.3 GHz | 2.7 GHz | 15 W | 14.5 dB | NA | 28V | 开发板 | Flange |
CGH27030P | GaN on SiC | DC | 6 GHz | 30 W | 15 dB | 28% | 28V | 封装分立晶体管 | Pill |
CGH27030F-AMP | GaN on SiC | DC | 6 GHz | 30 W | 15 dB | NA | 28V | 开发板 | Flange |
CGH27030S-AMP1 | GaN on SiC | 1.8 GHz | 2.2 GHz | 30 W | 18 dB | NA | 28V | 开发板 | 表面贴装 |
CGH40006P-AMP | GaN on SiC | 2 GHz | 6 GHz | 6 W | >11 dB | NA | 28V | 开发板 | Pill |
CGH40006S-AMP1 | GaN on SiC | DC | 6 GHz | 6 W | >11 dB | NA | 28V | 开发板 | 表面贴装 |
CGH40025P | GaN on SiC | DC | 6 GHz | 25 W | >13 dB | 62% | 28V | 封装分立晶体管 | Pill |
CGH40025F-AMP | GaN on SiC | 3.4 GHz | 3.8 GHz | 25 W | >13 dB | NA | 28V | 开发板 | Flange |
CGH40035F-AMP | GaN on SiC | 3.3 GHz | 3.7 GHz | 35 W | >13 dB | NA | 28V | 开发板 | Flange |
CGH40045P | GaN on SiC | DC | 4 GHz | 45 W | >12 dB | 55% | 28V | 封装分立晶体管 | Pill |
CGH40045F-AMP | GaN on SiC | 2.3 GHz | 2.7 GHz | 45 W | >12 dB | NA | 28V | 开发板 | Flange |
CGH40090PP-AMP | GaN on SiC | 0.5 GHz | 2.5 GHz | 90 W | >14 dB | NA | 28V | 开发板 | Push-Pull |
CGH40120F-AMP | GaN on SiC | 1.2 GHz | 1.4 GHz | 120 W | >15 dB | NA | 28V | 开发板 | Flange |
CGH40180PP-AMP | GaN on SiC | 1.1 GHz | 1.3 GHz | 180 W | >15 dB | NA | 28V | 开发板 | Push-Pull |
CGH55030P2 | GaN on SiC | DC | 6 GHz | 25 W | 12 dB | 60% | 28V | 封装分立晶体管 | Pill |
CGH55030F2-AMP | GaN on SiC | 5.4 GHz | 5.9 GHz | 25 W | 12 dB | NA | 28V | 开发板 | Flange |
CGHV14250P | GaN on SiC | DC | 1.6 GHz | 250 W | 18 dB | 77% | 封装分立晶体管 | Pill | |
CGHV14250F-AMP | GaN on SiC | DC | 1.6 GHz | 250 W | 18 dB | NA | 开发板 | Flange | |
CGHV14500P | GaN on SiC | 1.2 GHz | 1.4 GHz | 500 W | 16 dB | 68% | 封装分立晶体管 | Pill | |
CGHV14500F-AMP | GaN on SiC | 1.2 GHz | 1.4 GHz | 500 W | 16 dB | NA | 开发板 | Flange | |
CGHV14800P | GaN on SiC | 1.2 GHz | 1.4 GHz | 800 W | 16 dB | 65% | 封装分立晶体管 | Pill | |
CGHV14800F-AMP | GaN on SiC | 1.2 GHz | 1.4 GHz | 800 W | 16 dB | NA | 开发板 | Flange | |
CGHV1F025S-AMP1 | GaN on SiC | 8.9 GHz | 9.6 GHz | 25 W | 11 dB | NA | 40V | 开发板 | 表面贴装 |
CGHV27060MP-AMP1 | GaN on SiC | 2.5 GHz | 2.7 GHz | 60 W | 16.5 dB | NA | 50V | 开发板 | Plastic |
CGHV31500F-AMP | GaN on SiC | 2.7 GHz | 3.1 GHz | 500 W | 12.75 dB | NA | 开发板 | Flange | |
CGHV35150P | GaN on SiC | 2.9 GHz | 3.5 GHz | 150 W | 13.5 dB | 50% | 封装分立晶体管 | Pill | |
CGHV35150F-AMP | GaN on SiC | 2.9 GHz | 3.5 GHz | 150 W | 13.5 dB | NA | 开发板 | Flange | |
CGHV35400F-AMP | GaN on SiC | 2.9 GHz | 3.5 GHz | 400 W | 11 dB | NA | 50V | 开发板 | Flange |
CGHV40030P | GaN on SiC | DC | 6 GHz | 30 W | 16 dB | 70% | 50V | 封装分立晶体管 | Pill |
CGHV40030F-AMP2 | GaN on SiC | 0.5 GHz | 2.7 GHz | 30 W | 16 dB | NA | 50V | 开发板 | Flange |
CGHV40050P | GaN on SiC | DC | 4 GHz | 50 W | 16 dB | 53% | 50V | 封装分立晶体管 | Pill |
CGHV40050F-AMP | GaN on SiC | 0.8 GHz | 2 GHz | 50 W | 16 dB | NA | 50V | 开发板 | Flange |
CGHV40100P | GaN on SiC | DC | 3 GHz | 100 W | 17.5 dB | 55% | 50V | 封装分立晶体管 | Pill |
CGHV40100F-AMP | GaN on SiC | 0.5 GHz | 2.5 GHz | 100 W | 17.5 dB | NA | 50V | 开发板 | Flange |
CGHV40100P-AMP | GaN on SiC | 0.5 GHz | 2.5 GHz | 100 W | 17.5 dB | NA | 50V | 开发板 | Pill |
CGHV40180F | GaN on SiC | DC | 2 GHz | 200 W | 24 dB | 70% | 28V/50V | 封装分立晶体管 | Flange |
CGHV40180F-AMP3 | GaN on SiC | 0.96 GHz | 1.25 GHz | 200 W | 24 dB | NA | 28V/50V | 开发板 | Flange |
CGHV40200PP-AMP | GaN on SiC | 1.7 GHz | 1.9 GHz | 250 W | 21 dB | NA | 50V | 开发板 | Push-Pull |
CGHV50200F-AMP | GaN on SiC | 4.4 GHz | 5 GHz | 200 W | 11.5 dB | NA | 40V | 开发板 | Flange |
CGHV59070P | GaN on SiC | 4.5 GHz | 5.9 GHz | 70 W | 12 dB | 50% | 50V | 封装分立晶体管 | Pill |
CGHV59070F-AMP | GaN on SiC | 4.8 GHz | 5.9 GHz | 70 W | 12 dB | NA | 50V | 开发板 | Flange |
CGHV59350P | GaN on SiC | 5.2 GHz | 5.9 GHz | 350 W | 11 dB | 55% | 50V | 封装分立晶体管 | Pill |
CGHV59350F-AMP | GaN on SiC | 5.2 GHz | 5.9 GHz | 350 W | 11 dB | NA | 50V | 开发板 | Flange |
CGHV96050F1-AMP | GaN on SiC | 7.9 GHz | 8.4 GHz | 50 W | >13 dB | NA | 40V | 开发板 | Flange |
CMPA0060002F-AMP | GaN on SiC | DC | 6 GHz | 2 W | 17 dB | NA | 28V | 开发板 | Flange |
CMPA0060002F1-AMP | GaN on SiC | DC | 6 GHz | 2 W | 18 dB | NA | 28V | 开发板 | Flange |
CMPA0060025F-AMP | GaN on SiC | DC | 6 GHz | 25 W | 17 dB | NA | 50V | 开发板 | Flange |
CMPA0060025F1-AMP | GaN on SiC | DC | 6 GHz | 25 W | 17 dB | NA | 50V | 开发板 | Flange |
CMPA0527005F-AMP1 | GaN on SiC | 1.2 GHz | 1.4 GHz | 5 W | 20 dB | NA | 50V | 开发板 | Flange |
CMPA1D1E025F-AMP | GaN on SiC | 13.5 GHz | 14.5 GHz | 25 W | 26 dB | NA | 40V | 开发板 | Flange |
CMPA2060035F-AMP | GaN on SiC | 2 GHz | 6 GHz | 35 W | 27 dB | NA | 28V | 开发板 | Flange |
CMPA2560025F-AMP | GaN on SiC | 2.5 GHz | 6 GHz | 25 W | 24 dB | NA | 28V | 开发板 | Flange |
CMPA2735075F1-AMP | GaN on SiC | 2.7 GHz | 3.5 GHz | 75 W | 29 dB | NA | 28V | 开发板 | Flange |
CMPA2738060F-AMP | GaN on SiC | 2.7 GHz | 3.8 GHz | 80 W | 34 dB | NA | 50V | 开发板 | Flange |
CMPA5259025F-AMP | GaN on SiC | 5.2 GHz | 5.9 GHz | 37 W | 32 dB | NA | 28V | 开发板 | Flange |
CMPA5259050F-AMP | GaN on SiC | 5.2 GHz | 5.9 GHz | 50 W | 30 dB | NA | 28V | 开发板 | Flange |
CMPA5585030F-AMP | GaN on SiC | 5.5 GHz | 8.5 GHz | 30 W | 25 dB | NA | 28V | 开发板 | Flange |
CMPA601C025F-AMP | GaN on SiC | 6 GHz | 12 GHz | 25 W | 33 dB | NA | 28V | 开发板 | Flange |
CMPA801B025P | GaN on SiC | 8 GHz | 11 GHz | 25 W | 16 dB | 36% | 28V | Packaged MMIC | Pill |
CMPA801B025F-AMP | GaN on SiC | 8 GHz | 11 GHz | 25 W | 16 dB | NA | 28V | 开发板 | Flange |
CMPA801B030F-AMP | GaN on SiC | 8 GHz | 11 GHz | 30 W | 16 dB | NA | 28V | 开发板 | Flange |
CMPA901A035F-AMP | GaN on SiC | 9 GHz | 10 GHz | 40 W | 34 dB | NA | 28V | 开发板 | Flange |
LTN/GTVA101K42EV-V1 | GaN on SiC | 0.96 GHz | 1.4 GHz | 1400 W | 17 dB | 68% | 50V | 封装分立晶体管 | Bolt Down |
LTN/GTVA311801FA-V1 | GaN on SiC | 2.7 GHz | 3.1 GHz | 180 W | 15 dB | 70% | 50V | 封装分立晶体管 | Earless |
GTVA355001EC | GaN on SiC | 2.9 GHz | 3.5 GHz | 500 W | >11.5 dB | 65% | 50V | 封装分立晶体管 | Bolt Down |
LTN/GTVA355001EC-V1 | GaN on SiC | 2.9 GHz | 3.5 GHz | 500 W | >11.5 dB | 65% | 50V | 封装分立晶体管 | Bolt Down |
CGH55015P1 | GaN on SiC | DC | 6 GHz | 15 W | >10.5 dB | 25% | 28V | 封装分立晶体管 | Pill |
CGH35060P1 | GaN on SiC | 3.3 GHz | 3.6 GHz | 60 W | 12 dB | 25% | 28V | 封装分立晶体管 | Pill |
CGH35060P2 | GaN on SiC | 3.1 GHz | 3.5 GHz | 60 W | 12 dB | 60% | 28V | 封装分立晶体管 | Pill |
CGH55030P1 | GaN on SiC | DC | 6 GHz | 30 W | 10 dB | 25% | 28V | 封装分立晶体管 | Pill |
GTVA107001EC-V1 | GaN on SiC | 0.96 GHz | 1.215 GHz | 700 W | 20 dB | 70% | 50V | 封装分立晶体管 | Bolt Down |
GTVA107001FC-V1 | GaN on SiC | 0.96 GHz | 1.215 GHz | 700 W | 20 dB | 70% | 50V | 封装分立晶体管 | Earless |
GTVA126001EC-V1 | GaN on SiC | 1.2 GHz | 1.4 GHz | 600 W | 20 dB | 63% | 50V | 封装分立晶体管 | Bolt Down |
GTVA126001FC-V1 | GaN on SiC | 1.2 GHz | 1.4 GHz | 600 W | 20 dB | 63% | 50V | 封装分立晶体管 | Earless |
PTVA042502EC-V1 | LDMOS | 0.47 GHz | 0.806 GHz | 250 W | 19 dB | 26% | 50V | 封装分立晶体管 | Bolt Down |
PTVA042502FC-V1 | LDMOS | 0.47 GHz | 0.806 GHz | 250 W | 19 dB | 26% | 50V | 封装分立晶体管 | Earless |
PTVA043502EC-V1 | LDMOS | DC | 1.35 GHz | 350 W | 18 dB | 30% | 50V | 封装分立晶体管 | Bolt Down |
PTVA043502FC-V1 | LDMOS | DC | 1.35 GHz | 350 W | 18 dB | 30% | 50V | 封装分立晶体管 | Earless |
CGH35015P | GaN on SiC | DC | 6 GHz | 15 W | 12 dB | 28V | 封装分立晶体管 | Pill | |
CGHV96130F | GaN on SiC | 8.4 GHz | 9.6 GHz | 130 W | 7.5 dB | 42% | 40V | 封装分立晶体管 | Flange |
CMPA2935150S | GaN on SiC | 2.9 GHz | 3.5 GHz | 150 W | Packaged MMIC | Plastic | |||
CMPA0530002S | GaN on SiC | 0.5 GHz | 3 GHz | 2 W | 13 db | 28V | Packaged MMIC | 表面贴装 | |
CGHV27060MP-AMP3 | GaN on SiC | 0.8 GHz | 2.7 GHz | 60 W | 16.5 dB | NA | 50V | 开发板 | Plastic |
CGHV27060MP-AMP4 | GaN on SiC | DC | 1 GHz | 60 W | 16.5 dB | NA | 45V | 开发板 | Plastic |
CG2H40035F-AMP1 | GaN on SiC | 0.5 GHz | 3 GHz | 35 W | 14 dB | NA | 28V | 开发板 | Flange |
CMPA901A020S | GaN on SiC | 9 GHz | 10 GHz | 20 W | 35 dB | 45% | 28V | Packaged MMIC | Plastic |
CMPA801B030S | GaN on SiC | 7.9 GHz | 11 GHz | 40 W | 27 dB | 40% | 28V | Packaged MMIC | Plastic |
CMPA9396025S | GaN on SiC | 9 GHz | 10 GHz | 35 W | 27 dB | 45% | 40V | Packaged MMIC | Plastic |
CMPA3135060S | GaN on SiC | 3.1 GHz | 3.5 GHz | 75 W | 29 dB | 55% | 50V | Packaged MMIC | Plastic |
CMPA5259050S | GaN on SiC | 5.2 GHz | 5.9 GHz | 50 W | 30 dB | 50% | 28V | Packaged MMIC | 表面贴装 |
CMPA5259080S | GaN on SiC | 5.2 GHz | 5.9 GHz | 80 W | 22 dB | 44% | 40V | Packaged MMIC | 表面贴装 |
CMPA5259025S | GaN on SiC | 5.2 GHz | 5.9 GHz | 40 W | 25 dB | 54% | 28V | Packaged MMIC | Plastic |
CMPA801B030F1 | GaN on SiC | 8 GHz | 12 GHz | 35 W | 19 dB | 36% | 28V | Packaged MMIC | Flange |
CMPA1C1D080F | GaN on SiC | 12.75 GHz | 13.25 GHz | 90 W | 25 dB | 21% | 40V | Packaged MMIC | Flange |