|
描述 |
标准 |
MIL-M-38510 |
规范 |
607 |
涵盖范围 |
This specification covers the detail requirements for monolithic silicon, complimentary oxide insulated silicon gate semiconductor, semicustom (gate array) devices. |
描述 |
Microcircuits, Digital CMOS Semicustom (Gate Array) Devices, Monolithic Silicon |
分类归属 |
5962 |
合格产品清单 |
QML-38535-20 NOT 1 |
文档状态 |
停用
|
文档日期 |
2016-03-16 |
审查日期 |
2026-03-14 |
文档类型 |
Detail Specification |
文档注释 |
It is recommended that you use Adobe Reader v7.0 or higher for optimal download performance;older versions should continue to work, but downloading large files may appear to take longer, so please be patient in those cases. |
起草机构 |
CC |
编制机构 |
DLA Land and Maritime |
协调级别 |
Full |
陆军管理 |
US Army Communications Electronics Command |
海军管理 |
Space and Naval Warfare Systems Command |
空军管理 |
Air Force Life Cycle Management Center - Electronic Components, Wire and Ca |
国防后勤局管理 |
DLA Land and Maritime |
其他管理 |
National Aeronautics and Space Administration (NASA) |