|
描述 |
| 标准 |
MIL-S-19500 |
| 规范 |
591 |
| 涵盖范围 |
This specification covers the detail requirements for N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching application. Three levels of product assurance are provided for each device type as specified in MIL-S-19500, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR). Superseding DESC drawing 89007 of 19 December 1989 (see 6.4). |
| 描述 |
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7123, 2N7124, 2N7125, 2N7126, JANTX, JANTXV, AND JANS (S/S BY MIL-S-19500/543) |
| 分类归属 |
5961 |
| 文档状态 |
注销 |
| 取消日期 |
1995-02-10 |
| 文档类型 |
Detail Specification |
| 文档注释 |
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| 起草机构 |
CC |
| 编制机构 |
DLA Land and Maritime |
| 协调级别 |
Full |
| 陆军管理 |
Army Research Laboratory, Physical Sciences Directorate (S/S by CR) |
| 海军管理 |
Space and Naval Warfare Systems Command |
| 空军管理 |
Rome Laboratory (S/S by AF 11) |
| 国防后勤局管理 |
Defense Electronics Supply Center (S/S by CC) |
