|
描述 |
| 标准 |
MIL-S-19500 |
| 规范 |
524 |
| 描述 |
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, DUAL-GATE, DEPLETION-TYPE, INSULATED-GATE, SILICON TYPE 3N204, TX3N204 AND TXV3N204 (NO S/S DOCUMENT) |
| 分类归属 |
5961 |
| 文档状态 |
注销 |
| 取消日期 |
1983-11-01 |
| 文档类型 |
Detail Specification |
| 文档注释 |
It is recommended that you use Adobe Reader v7.0 or higher for optimal download performance;older versions should continue to work, but downloading large files may appear to take longer, so please be patient in those cases. |
| 起草机构 |
CC |
| 编制机构 |
Rome Laboratory (S/S by AF 11) |
| 协调级别 |
Limited |
| 空军管理 |
Rome Laboratory (S/S by AF 11) |
