|
描述 |
| 标准 |
MIL-S-19500 |
| 规范 |
46 |
| 涵盖范围 |
This specification covers the detail requirments for germanium, PNP, transistors for relatively high-power circuit applications, and having the following particular characteristics of TMB = +25 Deg + 3 Deg C. |
| 描述 |
SEMICONDUCTOR DEVICE,TRANSISTOR, PNP, GERMANIUM, POWER TYPES 2N574, 2N575, 2N575A, 2N1157A (NO S/S DOCUMENT) |
| 分类归属 |
5961 |
| 文档状态 |
注销 |
| 取消日期 |
2001-11-14 |
| 文档类型 |
Detail Specification |
| 文档注释 |
It is recommended that you use Adobe Reader v7.0 or higher for optimal download performance;older versions should continue to work, but downloading large files may appear to take longer, so please be patient in those cases. |
| 起草机构 |
CC |
| 编制机构 |
DLA Land and Maritime |
| 协调级别 |
Full |
| 陆军管理 |
US Army Communications Electronics Command |
| 国防后勤局管理 |
DLA Land and Maritime |
