|
描述 |
| 标准 |
MIL-S-19500 |
| 规范 |
163 |
| 涵盖范围 |
This specification covers the detail requirements for diffused silicon, NPN, junction transistors with the following salient characteristics at an ambient temperature of (25 plus/minus 3) deg. C. |
| 描述 |
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON TYPE 2N1072 (NO S/S DOCUMENT) |
| 分类归属 |
5961 |
| 文档状态 |
注销 |
| 取消日期 |
2001-11-20 |
| 文档类型 |
Detail Specification |
| 文档注释 |
It is recommended that you use Adobe Reader v7.0 or higher for optimal download performance;older versions should continue to work, but downloading large files may appear to take longer, so please be patient in those cases. |
| 起草机构 |
CC |
| 编制机构 |
DLA Land and Maritime |
| 协调级别 |
Full |
| 陆军管理 |
US Army Communications Electronics Command |
| 海军管理 |
Naval Surface Warfare Center, Crane Division (S/S by SH) |
| 空军管理 |
Air Force Life Cycle Management Center - Electronic Components, Wire and Ca |
| 国防后勤局管理 |
DLA Land and Maritime |
