| MIL-S-19500/531 |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N CHANNEL, DUAL GATE, DEPLETION TYPE, INSULATED GATE, SILICON DEVICE TYPES 3N201, 3N202, 3N203 AND TX, TXV (NO S/S DOCUMENT) |
| 描述 | |
| 标准 | MIL-S-19500 |
| 规范 | 531 |
| 描述 | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N CHANNEL, DUAL GATE, DEPLETION TYPE, INSULATED GATE, SILICON DEVICE TYPES 3N201, 3N202, 3N203 AND TX, TXV (NO S/S DOCUMENT) |
| 分类归属 | 5961 |
| 文档状态 | 注销 |
| 取消日期 | 1982-03-19 |
| 文档类型 | Detail Specification |
| 文档注释 | It is recommended that you use Adobe Reader v7.0 or higher for optimal download performance;older versions should continue to work, but downloading large files may appear to take longer, so please be patient in those cases. |
| 起草机构 | CC |
| 编制机构 | Rome Laboratory (S/S by AF 11) |
| 协调级别 | Limited |
| 空军管理 | Rome Laboratory (S/S by AF 11) |
| 版本信息 | 文档描述 | 授权等级 | 文档日期 | 页数 | 文档大小 |
| 购买 | Notice 1 - Cancellation | A | 1982-03-19 | 1 | 23.9 KB |