|
描述 |
| 标准 |
MIL-PRF-19500 |
| 规范 |
634 |
| 涵盖范围 |
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened power transistor intended for use in high density power switching applications. One level of product assurance is provided for each device type as specified in MIL-PRF-19500. |
| 描述 |
Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7405, 2N7406, 2N7407, and 2N7408, JANSD and JANSR |
| 分类归属 |
5961 |
| 合格产品清单 |
QML-19500-31 NOT 1 |
| 文档状态 |
有效
|
| 文档日期 |
2013-12-06 |
| 审查日期 |
2018-12-05 |
| 文档类型 |
Performance Specification |
| 文档注释 |
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| 起草机构 |
CC |
| 编制机构 |
DLA Land and Maritime |
| 协调级别 |
Full |
| 陆军管理 |
US Army Communications Electronics Command |
| 海军管理 |
Space and Naval Warfare Systems Command |
| 空军管理 |
Air Force Life Cycle Management Center - Electronic Components, Wire and Ca |
| 国防后勤局管理 |
DLA Land and Maritime |
| 其他管理 |
National Aeronautics and Space Administration (NASA) |
