|
描述 |
| 标准 |
MIL-PRF-19500 |
| 规范 |
733 |
| 涵盖范围 |
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. applications. See 6.7 for JANHC and JANKC die versions. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV and JANS product assurance levels. |
| 描述 |
Transistor, Field Effect Radiation Hardened * P-Channel, Silicon, Device, Types 2N7523, and 2N7524, JANTXVR, F and JANSR, F |
| 分类归属 |
5961 |
| 合格产品清单 |
QML-19500-31 NOT 1 |
| 文档状态 |
有效
|
| 文档日期 |
2015-11-04 |
| 审查日期 |
2020-11-02 |
| 文档类型 |
Performance Specification |
| 文档注释 |
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| 项目编号 |
5961-2016-051|s |
| 起草机构 |
CC |
| 编制机构 |
DLA Land and Maritime |
| 协调级别 |
Full |
| 陆军管理 |
US Army Communications Electronics Command |
| 海军管理 |
Space and Naval Warfare Systems Command |
| 空军管理 |
Air Force Life Cycle Management Center - Electronic Components, Wire and Ca |
| 国防后勤局管理 |
DLA Land and Maritime |
| 其他管理 |
National Aeronautics and Space Administration (NASA) |
