|
描述 |
标准 |
MIL-PRF-19500 |
规范 |
705 |
涵盖范围 |
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE), power transistor Two levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. |
描述 |
Transistor, Field Effect Radiation Hardened, N-Channel, Silicon Device Types 2N7488T3, 2N7489T3, and 2N7490T3, JANTXVR and JANSR |
分类归属 |
5961 |
合格产品清单 |
QML-19500-31 NOT 1 |
文档状态 |
有效
|
文档日期 |
2014-11-24 |
审查日期 |
2019-11-23 |
文档类型 |
Performance Specification |
文档注释 |
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起草机构 |
CC |
编制机构 |
DLA Land and Maritime |
协调级别 |
Full |
陆军管理 |
US Army Communications Electronics Command |
海军管理 |
Space and Naval Warfare Systems Command |
空军管理 |
Air Force Life Cycle Management Center - Electronic Components, Wire and Ca |
国防后勤局管理 |
DLA Land and Maritime |
其他管理 |
National Aeronautics and Space Administration (NASA) |