|
描述 |
| 标准 |
MIL-PRF-19500 |
| 规范 |
654 |
| 涵盖范围 |
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event characterization - see figure 4), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. |
| 描述 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPE 2N7430T1 JANTXVD, JANTXVR, JANSD, AND JANSR (NO S/S DOCUMENT) |
| 分类归属 |
5961 |
| 文档状态 |
注销 |
| 取消日期 |
2005-10-19 |
| 文档类型 |
Performance Specification |
| 文档注释 |
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| 起草机构 |
CC |
| 编制机构 |
DLA Land and Maritime |
| 协调级别 |
Full |
| 陆军管理 |
US Army Communications Electronics Command |
| 海军管理 |
Space and Naval Warfare Systems Command |
| 空军管理 |
Air Force Life Cycle Management Center - Electronic Components, Wire and Ca |
| 国防后勤局管理 |
DLA Land and Maritime |
| 其他管理 |
National Aeronautics and Space Administration (NASA) |
