|
描述 |
| 标准 |
MIL-PRF-19500 |
| 规范 |
707 |
| 涵盖范围 |
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor for use in particular power-switching applications. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (Eas) and maximum avalanche current (Ias). See 6.5 for unencapsulated JANHC and JANKC die versions. |
| 描述 |
Transistor, Field Effect Radiation Hardened (Total Dose and Single Event Effects) N-Channel, Silicon, Types 2N7500U5, 2N7501U5, and 2N7502U5, JANTXVR and JANSR |
| 分类归属 |
5961 |
| 合格产品清单 |
QML-19500-31 NOT 1 |
| 文档状态 |
有效
|
| 文档日期 |
2015-02-11 |
| 审查日期 |
2020-02-10 |
| 文档类型 |
Performance Specification |
| 文档注释 |
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| 起草机构 |
CC |
| 编制机构 |
DLA Land and Maritime |
| 协调级别 |
Full |
| 陆军管理 |
US Army Communications Electronics Command |
| 海军管理 |
Space and Naval Warfare Systems Command |
| 空军管理 |
Air Force Life Cycle Management Center - Electronic Components, Wire and Ca |
| 国防后勤局管理 |
DLA Land and Maritime |
| 其他管理 |
National Aeronautics and Space Administration (NASA) |
