|
描述 |
| 标准 |
MIL-PRF-19500 |
| 规范 |
658 |
| 涵盖范围 |
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization, see figure 4), power transistor intended for use in high density power switching applications. |
| 描述 |
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, P-Channel Silicon Type 2N7438, and 2N7439 JANSD and JANSR |
| 分类归属 |
5961 |
| 文档状态 |
有效
|
| 文档日期 |
2011-07-15 |
| 审查日期 |
2016-07-13 |
| 文档类型 |
Performance Specification |
| 文档注释 |
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| 起草机构 |
CC |
| 编制机构 |
DLA Land and Maritime |
| 协调级别 |
Full |
| 陆军管理 |
US Army Communications Electronics Command |
| 海军管理 |
Space and Naval Warfare Systems Command |
| 空军管理 |
Air Force Life Cycle Management Center - Electronic Components, Wire and Ca |
| 其他管理 |
National Aeronautics and Space Administration (NASA) |
