|
描述 |
| 标准 |
MIL-PRF-19500 |
| 规范 |
630 |
| 涵盖范围 |
This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS) and maximum avalanche current (IAS). See 6.4 for JANHC and JANKC die versions. |
| 描述 |
Semiconductor Device, Field Effect, Radiation Hardened Transistor, P-Channel, Silicon, Types 2N7389, 2N7390, 2N7389U, 2N7389U5, and 2N7390U, 2N7390U5, JANTXV, R, and F and JANS, R, and F |
| 分类归属 |
5961 |
| 合格产品清单 |
QML-19500-31 NOT 1 |
| 文档状态 |
有效
|
| 文档日期 |
2012-01-27 |
| 审查日期 |
2017-01-25 |
| 文档类型 |
Performance Specification |
| 文档注释 |
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| 起草机构 |
CC |
| 编制机构 |
DLA Land and Maritime |
| 协调级别 |
Full |
| 陆军管理 |
US Army Communications Electronics Command |
| 海军管理 |
Space and Naval Warfare Systems Command |
| 空军管理 |
Air Force Life Cycle Management Center - Electronic Components, Wire and Ca |
| 国防后勤局管理 |
DLA Land and Maritime |
| 其他管理 |
National Aeronautics and Space Administration (NASA) |
