|
描述 |
| 标准 |
MIL-PRF-19500 |
| 规范 |
683 |
| 涵盖范围 |
This specification covers the performance requirements for an N channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. See 6.5 for JANHC and JANKC die versions. |
| 描述 |
Semiconductor Device, Transistor, Field Effect, N-Channel, Radiation Hardened (Total Dose and Single Event Effects) Type 2N7467U2, JANTXVR, F, G, and H and JANSR, F, G, and H |
| 分类归属 |
5961 |
| 合格产品清单 |
QML-19500-31 NOT 1 |
| 文档状态 |
有效
|
| 文档日期 |
2015-04-03 |
| 审查日期 |
2020-04-01 |
| 文档类型 |
Performance Specification |
| 文档注释 |
It is recommended that you use Adobe Reader v7.0 or higher for optimal download performance;older versions should continue to work, but downloading large files may appear to take longer, so please be patient in those cases. |
| 项目编号 |
5961-2016-041|s |
| 起草机构 |
CC |
| 编制机构 |
DLA Land and Maritime |
| 协调级别 |
Full |
| 陆军管理 |
US Army Communications Electronics Command |
| 海军管理 |
Space and Naval Warfare Systems Command |
| 空军管理 |
Air Force Life Cycle Management Center - Electronic Components, Wire and Ca |
| 国防后勤局管理 |
DLA Land and Maritime |
| 其他管理 |
National Aeronautics and Space Administration (NASA) |
