|
描述 |
| 标准 |
MIL-PRF-19500 |
| 规范 |
668 |
| 涵盖范围 |
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power switching applications. One level of product assurance is provided for each device type as specified ni MIL-PRF-19500. |
| 描述 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7462U1 JANSD, -R (NO S/S DOCUMENT) |
| 分类归属 |
5961 |
| 文档状态 |
注销 |
| 取消日期 |
2005-06-22 |
| 文档类型 |
Performance Specification |
| 文档注释 |
It is recommended that you use Adobe Reader v7.0 or higher for optimal download performance;older versions should continue to work, but downloading large files may appear to take longer, so please be patient in those cases. |
| 起草机构 |
CC |
| 编制机构 |
DLA Land and Maritime |
| 协调级别 |
Full |
| 陆军管理 |
US Army Communications Electronics Command |
| 海军管理 |
Space and Naval Warfare Systems Command |
| 空军管理 |
Air Force Life Cycle Management Center - Electronic Components, Wire and Ca |
| 国防后勤局管理 |
DLA Land and Maritime |
| 其他管理 |
National Aeronautics and Space Administration (NASA) |
