|
描述 |
标准 |
MIL-PRF-19500 |
规范 |
667 |
涵盖范围 |
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event characterization - see figure 4), power transistor. Two levels of product assurance is provided for each device type as specified in MIL-PRF-19500. |
描述 |
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7456U1, 2N7457U1, 2N7458U1, AND 2N7459U1 JANTXVD, JANTXVR, JANSD, AND JANSR (NO S/S DOCUMENT) |
分类归属 |
5961 |
文档状态 |
注销 |
取消日期 |
2005-10-31 |
文档类型 |
Performance Specification |
文档注释 |
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起草机构 |
CC |
编制机构 |
DLA Land and Maritime |
协调级别 |
Full |
海军管理 |
Space and Naval Warfare Systems Command |
国防后勤局管理 |
DLA Land and Maritime |